Infineon IPZ40N04S5L2R8ATMA1 40V OptiMOS 5 Power MOSFET: Datasheet, Pinout, and Application Circuit Analysis
The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Infineon Technologies addresses this challenge with its advanced OptiMOS 5 family. The IPZ40N04S5L2R8ATMA1 stands as a prime example, a 40V N-channel power MOSFET engineered to deliver exceptional performance in a compact, thermally enhanced package. This article provides a detailed analysis of its datasheet, pinout, and a typical application circuit.
Datasheet Breakdown: Key Parameters and Performance
The datasheet for the IPZ40N04S5L2R8ATMA1 reveals a component optimized for low-voltage, high-frequency switching applications. Its cornerstone feature is an extremely low typical on-state resistance (RDS(on)) of just 1.8 mΩ at a gate-source voltage of 10 V. This minimal resistance is the primary contributor to reduced conduction losses, leading to higher overall system efficiency and lower heat generation.
Other critical parameters extracted from the datasheet include:
Continuous Drain Current (ID): Up to 100 A at a case temperature of 25°C, showcasing its high-current handling capability.
Avalanche Ruggedness: The device is rated for unclamped inductive switching (UIS), making it robust against voltage spikes commonly encountered in inductive load circuits like motor drives.
Gate Charge (QG): A typical total gate charge of 47 nC ensures fast switching transitions, which is crucial for minimizing switching losses in high-frequency applications such as switch-mode power supplies (SMPS) and DC-DC converters.
Package: Housed in an Infineon PG-TDSON-8-22 (S5O8) package, this MOSFET offers a superior footprint-to-performance ratio. The exposed top pad provides excellent thermal conductivity, allowing heat to be efficiently transferred to a PCB-mounted heatsink.
Pinout Configuration
The PG-TDSON-8 package has eight pins, but their assignment is optimized for power handling. The pinout is critical for correct PCB layout:
Pins 1, 2, 3, 6, 7, 8: These are all connected to the source terminal of the MOSFET. This multi-pin design is essential for minimizing parasitic inductance and providing a low-impedance path for high currents.
Pin 4: This is the gate pin. It requires a careful layout to avoid noise coupling and ensure stable switching behavior.
Pin 5: This pin is not connected (N.C.) and should be left floating.
The central exposed pad: This is electrically and thermally connected to the drain terminal. It must be soldered to a large copper area (pour) on the PCB to act as the primary heatsink.
Application Circuit Analysis: A Synchronous Buck Converter
A quintessential application for the IPZ40N04S5L2R8ATMA1 is as the low-side switch in a synchronous buck converter circuit, which steps down a higher DC voltage (e.g., 12V) to a lower one (e.g., 1.2V for a CPU core).
In this topology:
1. A high-side MOSFET (often a similar OptiMOS 5 device) and the IPZ40N04S5L2R8ATMA1 as the low-side switch work in complementary fashion.
2. When the high-side switch is on, the low-side switch is off, and current flows from the input through the inductor to the output.
3. When the high-side switch turns off, the low-side switch turns on, providing a low-resistance path (RDS(on)) for the inductor's freewheeling current to ground. This replaces the need for a less efficient Schottky diode.
4. The low Qg and RDS(on) of the IPZ40N04S5L2R8ATMA1 are paramount here. The low gate charge allows the MOSFET driver to quickly turn the device on and off with minimal drive loss, while the low on-resistance ensures that the voltage drop and power dissipation during the freewheeling period are kept to an absolute minimum. This directly translates to higher converter efficiency.
ICGOOODFIND
The Infineon IPZ40N04S5L2R8ATMA1 is a highly efficient power MOSFET that excels in demanding applications. Its standout features are an ultra-low RDS(on) of 1.8 mΩ, excellent thermal performance thanks to its S5O8 package, and fast switching characteristics enabled by low gate charge. These attributes make it an ideal choice for enhancing efficiency and power density in DC-DC converters, motor control systems, and other power management tasks.
Keywords: OptiMOS 5, Low RDS(on), Power MOSFET, Synchronous Buck Converter, High Efficiency.
