Infineon IPW60R190E6: A High-Performance 600V CoolMOS™ Power Transistor for Efficient Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics drives the continuous innovation in power semiconductor technology. At the forefront of this evolution is Infineon's IPW60R190E6, a 600V CoolMOS™ Power MOSFET that sets a new benchmark for performance in demanding switching applications. This device is engineered to meet the rigorous requirements of contemporary switch-mode power supplies (SMPS), power factor correction (PFC) stages, and industrial motor drives.

A defining characteristic of the IPW60R190E6 is its exceptionally low on-state resistance (RDS(on)) of 190 mΩ. This ultra-low resistance is paramount for minimizing conduction losses, which directly translates into higher system efficiency and reduced heat generation. By operating cooler, the device enhances overall reliability and can often allow for a more compact thermal management solution, contributing to a smaller system form factor.

Beyond its static performance, the transistor excels in dynamic operation. It is built upon Infineon's advanced superjunction (SJ) technology, which is the foundation of the CoolMOS™ family. This technology enables a drastic reduction in switching losses without compromising on ruggedness. The low gate charge (Qg) and outstanding figure-of-merit (FOM) ensure swift switching transitions, which is critical for high-frequency operation. This allows power supply designers to push switching frequencies higher, thereby reducing the size and cost of passive components like magnetics and capacitors.

The IPW60R190E6 is also designed with robustness in mind. It features a high avalanche ruggedness and an integrated fast body diode that provides excellent reverse recovery characteristics. This makes the device highly resilient against voltage spikes and other stressful conditions commonly encountered in real-world applications, such as inductive load switching.

Housed in a TO-247 package, this MOSFET offers a tried-and-tested industry-standard footprint that facilitates both prototyping and mass production. The package provides superior thermal performance, ensuring that the internal die can effectively transfer heat to an external heatsink, maintaining performance under continuous high-load conditions.

ICGOOODFIND: The Infineon IPW60R190E6 stands as a superior choice for engineers aiming to maximize efficiency and power density. Its combination of ultra-low RDS(on), minimal switching losses, and inherent robustness, all delivered in a reliable package, makes it an indispensable component for the next generation of high-efficiency power conversion systems.

Keywords: CoolMOS™, Low RDS(on), Superjunction Technology, High-Frequency Switching, Avalanche Ruggedness.