onsemi NTH4L028N170M1: High-Performance 1700V SiC Power MOSFET

The rapid evolution of power electronics demands components that offer higher efficiency, greater power density, and superior reliability. At the forefront of this revolution is silicon carbide (SiC) technology, and the onsemi NTH4L028N170M1 stands as a prime example of its advanced capabilities. This 1700V SiC MOSFET is engineered to meet the rigorous requirements of modern high-power applications, setting a new benchmark for performance.

A key advantage of this device is its exceptionally low on-resistance (RDS(on)) of just 28 mΩ. This minimal resistance directly translates to reduced conduction losses, enabling higher efficiency operation. When combined with the inherent material advantages of SiC—such as superior thermal conductivity and high-temperature operation—this MOSFET significantly outperforms traditional silicon-based alternatives. Systems can achieve higher power density, run cooler, and require less complex cooling solutions.

Furthermore, the 1700V breakdown voltage makes this component particularly suited for demanding industrial and energy infrastructure applications. It is an ideal choice for solar inverters, energy storage systems, industrial motor drives, and electric vehicle (EV) charging stations, where withstanding high DC link voltages is critical. The device’s robust voltage rating provides designers with a greater margin of safety and allows for more flexible circuit topologies.

The switching performance of the NTH4L028N170M1 is another area of excellence. SiC technology enables ultra-fast switching speeds, which drastically reduce switching losses. This is crucial for increasing the operating frequency of power converters, which in turn allows for the use of smaller passive components like inductors and capacitors. The result is a overall reduction in system size, weight, and cost.

Designed with reliability in mind, this MOSFET features a low intrinsic capacitance and a body diode with zero reverse recovery charge (Qrr). This eliminates the reverse recovery losses that are a major drawback of silicon MOSFETs and IGBTs, leading to cleaner switching, reduced electromagnetic interference (EMI), and enhanced system ruggedness.

ICGOOODFIND: The onsemi NTH4L028N170M1 is a high-performance 1700V SiC MOSFET that delivers a powerful combination of low on-resistance, fast switching speed, and high voltage robustness. It is a transformative component that empowers designers to build more efficient, compact, and reliable high-power systems for the renewable energy and industrial markets.

Keywords: SiC MOSFET, High Voltage, Low On-Resistance, Fast Switching, Power Efficiency