Infineon BSC014N06NSSCATMA1 N-Channel MOSFET: Datasheet, Application Notes, and Technical Specifications

Release date:2025-11-05 Number of clicks:62

Infineon BSC014N06NSSCATMA1 N-Channel MOSFET: Datasheet, Application Notes, and Technical Specifications

The Infineon BSC014N06NSSCATMA1 is a state-of-the-art N-channel MOSFET engineered using Infineon’s advanced OptiMOS™ 6 technology. This power MOSFET is designed to deliver exceptional efficiency and robustness in a compact package, making it an ideal solution for a wide range of power management applications, particularly where high power density and energy savings are critical.

Technical Specifications

This MOSFET is characterized by a drain-source voltage (VDS) of 60 V and a continuous drain current (ID) of 100 A at 25°C, showcasing its ability to handle significant power levels. A key highlight of this device is its extremely low typical on-state resistance (RDS(on)) of just 1.4 mΩ at 10 V gate-source voltage. This ultra-low RDS(on) is the primary factor behind its high efficiency, as it minimizes conduction losses and reduces heat generation. Housed in a SuperSO8 (PG-TDSON-8) package, it offers an excellent thermal performance-to-footprint ratio, which is crucial for space-constrained modern electronics. The device is also characterized by its low gate charge (Qg) and figures of merit, which contribute to reduced switching losses in high-frequency applications.

Datasheet Overview

The official datasheet for the BSC014N06NSSCATMA1 is an essential document for any design engineer. It provides a comprehensive set of information, including:

Absolute Maximum Ratings: Defining the operational boundaries for parameters like voltage, current, and temperature to ensure device reliability.

Electrical Characteristics: Detailed tables and graphs outlining RDS(on), gate threshold voltage, capacitance values, and switching times under various conditions.

Thermal Characteristics: Including junction-to-ambient and junction-to-case thermal resistances, vital for designing an effective thermal management system.

Safe Operating Area (SOA) Graphs: Illustrating the combinations of current and voltage within which the transistor can be operated without damage.

Application Notes

The BSC014N06NSSCATMA1 is exceptionally versatile and is predominantly used in:

Synchronous Rectification in Switch-Mode Power Supplies (SMPS): Its fast switching speed and low RDS(on) make it perfect for improving efficiency in DC-DC converters, including both buck and boost topologies.

Motor Control and Driving: Suitable for driving brushed DC motors in applications like power tools, drones, and industrial automation due to its high current handling capability.

Battery Management Systems (BMS): Used in protection circuits and for load switching in portable devices and electric vehicles, where minimizing voltage drop and power loss is paramount.

OR-ing and Hot-Swap Controllers: Its robust construction allows it to manage inrush currents and provide isolation between power paths.

When implementing this MOSFET, careful attention must be paid to:

Gate Driving: Ensuring a strong and clean gate drive signal with appropriate voltage (typically 10V) is critical to fully enhance the channel and achieve the advertised low RDS(on).

PCB Layout: A proper layout is mandatory to minimize parasitic inductance, which can cause voltage spikes and ringing. This includes using short and wide traces, especially for the power paths, and placing decoupling capacitors close to the drain and source pins.

Thermal Management: Despite its efficiency, at high currents, heat dissipation is necessary. The use of thermal vias and an adequate copper area on the PCB connected to the exposed pad is required to keep the junction temperature within safe limits.

ICGOODFIND: The Infineon BSC014N06NSSCATMA1 stands out as a premier choice for designers seeking to maximize efficiency and power density. Its industry-leading low on-resistance, high current capability, and excellent switching performance make it a cornerstone component for advanced power conversion systems, from server and telecom infrastructure to automotive and industrial applications.

Keywords: OptiMOS™ 6, Low RDS(on), Synchronous Rectification, Power Efficiency, SuperSO8 Package.

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