Infineon BSZ520N15NS3: A High-Performance 150V OptiMOS 5 Power MOSFET

In the pursuit of greater efficiency and power density in modern electronic systems, the choice of switching components is paramount. The Infineon BSZ520N15NS3 stands out as a premier solution, a 150V N-channel Power MOSFET engineered with Infineon’s advanced OptiMOS™ 5 technology. This device is specifically designed to set new benchmarks in performance for a wide array of demanding applications, from industrial motor drives and solar inverters to switch-mode power supplies (SMPS) and battery management systems.

The core of this MOSFET's superiority lies in its exceptional low figure-of-merit (R DS(on) Q G). With a maximum drain-source on-state resistance (R DS(on)) of just 5.2 mΩ at 10 V, it minimizes conduction losses, allowing for more efficient power transfer and reduced heat generation. Simultaneously, its low gate charge (Q G) ensures swift switching transitions, which directly translates to lower switching losses. This combination is crucial for operating at higher frequencies, enabling designers to use smaller passive components like inductors and capacitors, thereby increasing the overall power density of the end system.

Beyond raw switching performance, the BSZ520N15NS3 is housed in a SuperSO8 package, which offers a superior thermal resistance compared to standard SO-8 packages. This enhanced thermal capability allows the device to dissipate heat more effectively, supporting higher continuous drain current (I D) of 100 A and improving long-term reliability under strenuous operating conditions. The package also features an exposed die pad for optimized thermal connection to the PCB, further aiding in heat management.

The device’s 150V voltage rating provides a comfortable safety margin for 48V and 60V bus systems commonly found in telecom, server, and industrial environments, ensuring robust and stable operation. Furthermore, it boasts a low intrinsic body diode with excellent reverse recovery characteristics, reducing losses and voltage spikes in hard-switching and synchronous rectification topologies.

ICGOODFIND: The Infineon BSZ520N15NS3 is a top-tier Power MOSFET that exemplifies the benefits of the OptiMOS 5 platform. Its industry-leading low R DS(on), excellent switching performance, and robust thermal design make it an outstanding choice for engineers aiming to push the limits of efficiency and power density in their next-generation power conversion designs.

Keywords: OptiMOS 5, Low R DS(on), High Power Density, SuperSO8, Efficient Switching